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CMUD6263E PDF预览

CMUD6263E

更新时间: 2024-09-17 03:26:07
品牌 Logo 应用领域
CENTRAL 肖特基二极管
页数 文件大小 规格书
2页 151K
描述
ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODES

CMUD6263E 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:ULTRAMINI, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.37配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.32 VJESD-30 代码:R-PDSO-F3
JESD-609代码:e0最大非重复峰值正向电流:0.1 A
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.07 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMUD6263E 数据手册

 浏览型号CMUD6263E的Datasheet PDF文件第2页 
TM  
CMUD6263E  
CMUD6263AE  
CMUD6263CE  
Central  
Semiconductor Corp.  
CMUD6263SE  
DESCRIPTION:  
ENHANCED SPECIFICATION  
SURFACE MOUNT ULTRAmini™  
SILICON SCHOTTKY DIODES  
The CENTRAL SEMICONDUCTOR CMUD6263E  
Series types are Enhanced High Voltage Silicon  
Schottky diodes, epoxy molded in an ULTRAmini™  
SOT-523 surface mount package, designed for low  
current fast switching applications requiring a low  
forward voltage drop.  
ENHANCED SPECIFICATIONS:  
I = 70mA (from 15mA)  
F
I  
= 100mA (from 50mA)  
FSM  
SOT-523 CASE  
MARKING CODE:  
CMUD6263E SINGLE  
C63  
C6A  
CMUD6263AE DUAL, COMMON ANODE  
CMUD6263CE DUAL, COMMON CATHODE C6C  
CMUD6263SE DUAL, IN SERIES  
C6S  
MAXIMUM RATINGS: (T =25oC)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Forward Surge Current, tp=1.0 s  
Power Dissipation  
V
70  
70  
V
RRM  
I
mA  
mA  
mW  
F
I
100  
250  
FSM  
P
D
Operating and Storage  
Junction Temperature  
T ,T  
-65 to +150  
500  
oC  
oC/W  
J
stg  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25oC)  
A
SYMBOL  
I  
TEST CONDITIONS  
MIN  
70  
TYP  
10  
MAX  
100  
UNITS  
nA  
V =50V  
R
R
BV  
I =10μA  
V
R
R
♦♦  
♦♦  
♦♦  
♦♦  
V
F
I =100μA  
290  
345  
380  
700  
830  
320  
380  
400  
750  
900  
2.0  
mV  
mV  
mV  
mV  
mV  
pF  
F
V
I =500μA  
F
F
V
F
I =1.0mA  
F
V
I =10mA  
F
F
V
F
I =15mA  
F
C
V =0V, f=1.0MHz  
R
T
t
I =I =10mA, Irr=1mA, R =100Ω  
5.0  
ns  
rr  
R
F
L
Enhanced specification.  
♦♦ Additional Enhanced specification.  
R1 (22-March 2006)  

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