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CMS16(TE12L) PDF预览

CMS16(TE12L)

更新时间: 2024-09-20 21:18:07
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
6页 175K
描述
RECTIFIER DIODE,SCHOTTKY,40V V(RRM),UMD2VAR

CMS16(TE12L) 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:30 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:40 V最大反向电流:200 µA
反向测试电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

CMS16(TE12L) 数据手册

 浏览型号CMS16(TE12L)的Datasheet PDF文件第2页浏览型号CMS16(TE12L)的Datasheet PDF文件第3页浏览型号CMS16(TE12L)的Datasheet PDF文件第4页浏览型号CMS16(TE12L)的Datasheet PDF文件第5页浏览型号CMS16(TE12L)的Datasheet PDF文件第6页 
CMS16  
TOSHIBA Schottky Barrier Diode  
CMS16  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
DC-DC Converter Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
= 0.55 V (max) (@I  
= 3.0 A)  
FM  
FM  
= 3.0 A  
F (AV)  
= 40 V  
RRM  
Suitable for compact assembly due to a small surface-mount package:  
TM  
“MFLAT ” (Toshiba package name)”  
0.16  
Absolute Maximum Ratings (Ta = 25°C)  
1.75 ± 0.1  
+ 0.2  
2.4 0.1  
Characteristic  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
40  
V
A
RRM  
I
3.0 (Note 1)  
30 (50 Hz)  
40 to 150  
40 to 150  
F (AV)  
ANODE  
CATHODE  
Nonrepetitive peak surge current  
Junction temperature  
I
A
FSM  
T
j
°C  
°C  
Storage temperature range  
T
stg  
JEDEC  
Note : Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEITA  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: T= 106°C  
Device mounted on a ceramic board  
Board size: 50 mm × 50 mm  
Soldering size: 2 mm × 2 mm  
Board thickness: 0.64 mm  
Rectangular waveform (α = 180°), V = 20 V  
R
1
2010-08-09