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CMS02

更新时间: 2024-09-20 09:27:55
品牌 Logo 应用领域
东芝 - TOSHIBA 电池整流二极管开关光电二极管便携式便携式设备
页数 文件大小 规格书
5页 151K
描述
Switching Mode Power Supply Applications Portable Equipment Battery Applications

CMS02 技术参数

是否Rohs认证: 不符合生命周期:End Of Life
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknown风险等级:5.52
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMS02 数据手册

 浏览型号CMS02的Datasheet PDF文件第2页浏览型号CMS02的Datasheet PDF文件第3页浏览型号CMS02的Datasheet PDF文件第4页浏览型号CMS02的Datasheet PDF文件第5页 
CMS02  
TOSHIBA Schottky Barrier Rectifier Trench Schottky Barrier Type  
CMS02  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
Suitable for compact assembly due to small surface-mount package  
“M-FLATTM” (Toshiba package name)  
= 0.40 V (max)  
FM  
= 3.0 A  
F (AV)  
= 30 V  
RRM  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Repetitive peak reverse voltage  
Average forward current  
Symbol  
Rating  
Unit  
V
V
30  
RRM  
3.0  
(Note 1)  
I
A
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
40 (50 Hz)  
A
FSM  
JEDEC  
JEITA  
Junction temperature  
Storage temperature  
T
j
40~125  
40~150  
°C  
°C  
T
stg  
TOSHIBA  
3-4E1A  
Note 1: T= 89.2°C: Rectangular waveform (α = 180°), V = 15 V  
Weight: 0.023 g (typ.)  
R
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.5 A  
= 1.0 A  
= 3.0 A  
0.27  
0.30  
0.37  
0.05  
0.07  
170  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.40  
I
V
V
V
= 5 V  
RRM  
RRM  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
mA  
pF  
I
= 30 V  
0.5  
C
= 10 V, f = 1.0 MHz  
R
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
60  
R
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
Thermal resistance  
°C/W  
135  
16  
R
th (j-)  
1
2006-11-13  

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