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CMS04(T2L,TEMQ)

更新时间： 2024-11-21 18:47:35
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 399K
描述
Rectifier Diode

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中文翻译

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CMS04(T2L,TEMQ) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.7应用：GENERAL PURPOSE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.37 V
JESD-30 代码：R-PDSO-F2最大非重复峰值正向电流：70 A
元件数量：1相数：1
端子数量：2最高工作温度：125 °C
最低工作温度：-40 °C最大输出电流：5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE最大重复峰值反向电压：30 V
最大反向电流：8000 µA反向测试电压：30 V
表面贴装：YES技术：SCHOTTKY
端子形式：FLAT端子位置：DUAL
Base Number Matches：1

CMS04(T2L,TEMQ) 数据手册

 浏览型号CMS04(T2L,TEMQ)的Datasheet PDF文件第2页浏览型号CMS04(T2L,TEMQ)的Datasheet PDF文件第3页浏览型号CMS04(T2L,TEMQ)的Datasheet PDF文件第4页浏览型号CMS04(T2L,TEMQ)的Datasheet PDF文件第5页 
CMS04  
TOSHIBA Schottky Barrier Diode  
CMS04  
○ DC-DC Converters  
Unit: mm  
○ Radio-Frequency Rectification in Switching Regulators  
○ Reverse-Current Protection in Mobile Devices  
•
•
•
•
Repetitive peak reverse voltage : V  
= 30 V  
= 5.0 A  
RRM  
Average forward current  
Peak forward voltage  
: I  
F (AV)  
: V  
= 0.37 V (max)  
FM  
Suitable for high-density board assembly due to the use of a small  
Toshiba Nickname: M−FLATTM  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
5.0 (Note 1)  
70 (50 Hz)  
−40 to 125  
−40 to 150  
F (AV)  
Non-repetitive peak forward surge current  
Junction temperature  
I
A
FSM  
JEDEC  
JEITA  
―
―
T
°C  
°C  
j
Storage temperature  
T
stg  
TOSHIBA  
3-4E1S  
Note 1: Tℓ = 36°C: Rectangular waveform (α = 180°), V = 15 V  
R
Weight: 0.023 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 1 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.27  
0.31  
0.35  
0.31  
3.3  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
= 3 A (pulse test)  
= 5 A (pulse test)  
0.37  
I
V
V
V
= 5 V (pulse test)  
= 30 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
mA  
pF  
I
8.0  
C
j
= 10 V, f = 1.0 MHz  
R
330  
Device mounted on a ceramic board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
2 mm × 2 mm  
0.64 mm  
60  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
Device mounted on a glass-epoxy board  
°C/W  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
6 mm × 6 mm  
1.6 mm  
135  
16  
Thermal resistance (junction to lead)  
R
th (j-ℓ)  
Start of commercial production  
2000-07  
1
2018-09-11  
12345

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