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CMS05(TE12L,Q,M) PDF预览

CMS05(TE12L,Q,M)

更新时间: 2024-02-24 20:41:55
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 162K
描述
DIODE SCHOTTKY 30V 5A 3-4E1A

CMS05(TE12L,Q,M) 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:1.48应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.45 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:70 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:30 V
最大反向电流:800 µA反向测试电压:30 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

CMS05(TE12L,Q,M) 数据手册

 浏览型号CMS05(TE12L,Q,M)的Datasheet PDF文件第2页浏览型号CMS05(TE12L,Q,M)的Datasheet PDF文件第3页浏览型号CMS05(TE12L,Q,M)的Datasheet PDF文件第4页浏览型号CMS05(TE12L,Q,M)的Datasheet PDF文件第5页 
CMS05  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CMS05  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
Suitable for compact assembly due to small surface-mount package  
= 0.45 V (max)  
FM  
= 5.0 A  
F (AV)  
= 30 V  
RRM  
“MFLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
5.0 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
70 (50 Hz)  
A
FSM  
Junction temperature  
Storage temperature  
T
40~150  
40~150  
°C  
°C  
j
JEDEC  
JEITA  
T
stg  
Note 1: T= 100°C: Rectangular waveform (α = 180°), V = 15 V  
R
TOSHIBA  
3-4E1A  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
Weight: 0.023 g (typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 1.0 A  
= 3.0 A  
= 5.0 A  
0.35  
0.40  
0.43  
6.0  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.45  
I
V
V
V
= 5.0 V  
RRM  
RRM  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
μA  
I
= 30 V  
65  
800  
C
= 10 V, f = 1.0 MHz  
R
330  
pF  
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
60  
R
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
Thermal resistance  
°C/W  
135  
16  
R
th (j-)  
Start of commercial production  
2000-07  
1
2013-11-01  

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