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CMPTH10BKPBFREE PDF预览

CMPTH10BKPBFREE

更新时间: 2024-01-22 09:56:33
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 81K
描述
Transistor,

CMPTH10BKPBFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83其他特性:LOW NOISE
基于收集器的最大容量:0.7 pF集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):60
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):650 MHzVCEsat-Max:0.5 V
Base Number Matches:1

CMPTH10BKPBFREE 数据手册

 浏览型号CMPTH10BKPBFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
S e m ic o n d u c t o r Co r p .  
CMPTH10  
NPN SILICON RF TRANSISTOR  
DESCRIPTION:  
The  
CENTRAL  
SEMICONDUCTOR  
CMPTH10typeisanNPNsiliconRFtransistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designedforlownoiseUHF/VHFamplifierand  
high output oscillator applications.  
SOT-23 CASE  
Marking code is C3E.  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Power Dissipation  
V
V
V
P
30  
25  
3.0  
350  
V
V
V
CBO  
CEO  
EBO  
D
mW  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
357  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
I
V
V
=25V  
=2.0V  
nA  
nA  
V
V
V
CBO  
EBO  
CBO  
CEO  
EBO  
CE(SAT)  
BE(ON)  
FE  
T
cb  
CB  
EB  
BV  
BV  
BV  
V
V
h
f
C
I =100µA  
30  
25  
3.0  
C
I =1.0mA  
C
I =10µA  
E
I =4.0mA, I =0.4mA  
0.50  
0.95  
V
V
C
B
B
V
=10V, I =4.0mA  
CE  
CE  
CE  
CB  
CB  
CB  
V
V
V
V
V
=10V, I =4.0mA  
C
60  
650  
=10V, I =4.0mA, f=100MHz  
MHz  
pF  
pF  
C
=10V, I =0, f=1.0MHz  
E
0.70  
0.65  
9.0  
C
rb’C  
=10V, I =0, f=1.0MHz  
rb  
E
=10V, I =4.0mA, f=31.8MHz  
C
ps  
c
208  

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