CMPTH81BK

更新时间： 2024-01-13 10:20:07

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	124K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP, PLASTIC PACKAGE-3

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中文翻译

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技术参数
数据手册

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CMPTH81BK 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	60
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.225 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	600 MHz
Base Number Matches：	1

CMPTH81BK 数据手册

Central

CMPTH81

Semiconductor Corp.

SURFACE MOUNT

PNP SILICON RF TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTH81

type is a PNP Silicon RF Transistor, epoxy

molded in a surface mount package, designed

for general RF amplifier applications.

MARKING CODE: C3D

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (Continuous)

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

3.0

CBO

CEO

EBO

225

T ,T

J stg

-55 to +150

556

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C UNLESS OTHERWISE NOTED)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=10V

=2.0V

100

CBO

EBO

CBO

CEO

I =10µA

3.0

I =1.0mA

I =10µA

EBO

I =5.0mA, I =500µA

0.5

0.9

CE(SAT)

BE(ON)

=10V, I =5.0mA

=10V, I =5.0mA, f=100MHz

=10V, I =0, f=1.0MHz

600

MHz

0.85

0.65

=10V, I =0, f=1.0MHz

* FR-4 Epoxy PCB Substrate 1.6” x 1.6” x 0.06”\

R3 (20-February 2003)

中文翻译

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