Datasheet > CMPSH-3C

CMPSH-3C

更新时间： 2024-11-07 14:54:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1831K
描述
SOT-23

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中文翻译

获取价格

数据手册

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CMPSH-3C 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

CMPSH-3/-3A/-3C/-3S

SCHOTTKY BARRIER DIODE

SOT-23

FEATURES



High Switching Speed

Low Forward Voltage



CMPSH-3

CMPSH-3A

CMPSH-3C

CMPSH-3S

MARKING:

CMPSH-3

CMPSH-3A

CMPSH-3C

CMPSH-3S

DB1

DA5

DB2

D95

Solid dot = Green molding compound device.

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

Peak Repetitive Reverse Voltage

V_RRM

Continuous Forward Current

100

350

℃/W

℃

I_O

I_FRM

I_FSM

P_D

Peak Repetitive Forward Current

Non-repetitive Peak Forward Surge Current @ t=8.3ms

Power Dissipation

750

350

Thermal Resistance from Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

286

R_θJA

T_j

-40~+125

-55~+150

T_stg

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

I_R=100μA

V_R=25V

0.5

0.33

0.45

μA

I_F=2mA

V_F

Forward voltage

I_F=15mA

I_F=100mA

C_tot

t_rr

V_R=1V,f=1MHz

Total capacitance

I_F= I_R=10mA, I_rr=0.1×I_R, R_L=100Ω

Reverse recovery time

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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