Datasheet > CMPSH-3EBKPBFREE

CMPSH-3EBKPBFREE

更新时间： 2024-11-10 05:55:39

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
2页	659K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM),

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技术参数
数据手册

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CMPSH-3EBKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.33 V	最大非重复峰值正向电流：	0.75 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	0.2 A	最大重复峰值反向电压：	40 V
最大反向恢复时间：	0.005 µs	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
Base Number Matches：	1

CMPSH-3EBKPBFREE 数据手册

CMPSH-3E

CMPSH-3AE

CMPSH-3CE

CMPSH-3SE

www.centralsemi.com

DESCRIPTION:

ENHANCED SPECIFICATION

SURFACE MOUNT

SILICON SCHOTTKY DIODES

The CENTRAL SEMICONDUCTOR CMPSH-3E Series

types are Enhanced Versions of the CMPSH-3 Series

of Silicon Schottky Diodes in an SOT-23 Surface Mount

Package.

FEATURED ENHANCED SPECIFICATIONS:

♦ I from 100mA max to 200mA max.

♦ BV from 30V min to 40V min.

SOT-23 CASE

♦ V from 1.0V max to 0.8V max.

CMPSH-3E:

SINGLE

MARKING CODE: D95E

MARKING CODE: DB1E

MARKING CODE: DB2E

MARKING CODE: DA5E

CMPSH-3AE: DUAL, COMMON ANODE

CMPSH-3CE: DUAL, COMMON CATHODE

CMPSH-3SE: DUAL, IN SERIES

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦^{Peak Repetitive Reverse Voltage}

♦^{Continuous Forward Current}

Peak Repetitive Forward Voltage

Forward Surge Current, tp=10ms

Power Dissipation

200

RRM

350

FRM

750

FSM

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

500

UNITS

μA

V =25V

V =25V, T =100°C

100

I =100µA

♦

I =2.0mA

0.29

0.37

0.61

0.65

7.0

0.33

0.42

0.80

1.0

I =15mA

♦

I =100mA

♦

♦♦^V

I =200mA

V =1.0V, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

5.0

♦ Enhanced specification

♦♦ Additional Enhanced specification

R3 (27-January 2010)

中文翻译

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