CMPSH-3CE

更新时间： 2024-11-06 03:40:55

品牌	Logo	应用领域
CENTRAL		肖特基二极管
页数	文件大小	规格书
2页	129K
描述
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES

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中文翻译

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数据手册
替代型号

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CMPSH-3CE 数据手册

CMPSH-3E

CMPSH-3AE

CMPSH-3CE

CMPSH-3SE

Central

Semiconductor Corp.

ENHANCED SPECIFICATION

SURFACE MOUNT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPSH-3E

Series types are Enhanced Versions of the

CMPSH-3 Series of Silicon Schottky Diodes in an

SOT-23 Surface Mount Package.

SILICON SCHOTTKY DIODES

FEATURED ENHANCED SPECIFICATIONS:

♦ I from 100mA max to 200mA max.

♦ BV from 30V min to 40V min.

SOT-23 CASE

♦ V from 1.0V max to 0.8V max.

CMPSH-3E:

SINGLE

MARKING CODE: D95E

MARKING CODE: DB1E

MARKING CODE: DB2E

MARKING CODE: DA5E

CMPSH-3AE: DUAL, COMMON ANODE

CMPSH-3CE: DUAL, COMMON CATHODE

CMPSH-3SE: DUAL, IN SERIES

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Voltage

Forward Surge Current, tp=10ms

Power Dissipation

RRM

200

350

750

350

FRM

FSM

Operating and Storage

Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

357

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

I =100µA

0.29

0.37

0.61

0.65

µA

♦

I =2.0mA

0.33

0.42

0.80

1.0

500

100

I =15mA

♦

I =100mA

♦♦V

I =200mA

V =25V

V =25V, T =100°C

7.0

V =1.0V, f=1 MHz

I =I =10mA, I =1.0mA, R =100Ω

5.0

♦ Enhanced specification.

♦♦ Additional Enhanced specification.

R2 (6-August 2003)

中文翻译

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CMPSH-3CE 替代型号

型号	品牌	替代类型	描述	数据表
BAT721C,215	NXP	功能相似	BAT721C - 40 V, 200 mA, dual Schottky barrier diode TO-236 3-Pin
BAT721C	NXP	功能相似	Schottky barrier double diodes

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CMPSH-3CETRPBFREE	CENTRAL	获取价格	暂无描述
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CMPSH-3CP	MCC	获取价格	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
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