Datasheet > CMPD2836E_10

CMPD2836E_10

更新时间： 2024-09-09 09:27:43

品牌	Logo	应用领域
CENTRAL		二极管开关
页数	文件大小	规格书
2页	530K
描述
ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES

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CMPD2836E_10 数据手册

CMPD2836E

CMPD2838E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

DESCRIPTION:

DUAL, SILICON

SWITCHING DIODES

The CENTRAL SEMICONDUCTOR CMPD2836E and

CMPD2838E are Enhanced versions of the CMPD2836

and CMPD2838 High Speed Switching Diodes.

These devices are manufactured by the epitaxial

planar process, in an epoxy molded surface mount

SOT-23 package, designed for high speed switching

applications.

FEATURED ENHANCED SPECIFICATIONS:

♦ BV from 75V min to 120V min.

SOT-23 CASE

♦ V from 1.2V max to 1.0V max.

The following configurations are available:

CMPD2836E

CMPD2838E

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

MARKING CODE: CA2E

MARKING CODE: CA6E

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦ ^{Peak Repetitive Reverse Voltage}

120

200

RRM

Average Forward Current

Peak Forward Current, tp=1.0s

Power Dissipation

300

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

100

UNITS

♦

V =80V

I =100µA

120

150

0.72

0.84

0.92

1.5

I =10mA

0.85

0.95

1.0

I =50mA

I =100mA

V =0, f=1.0MHz

4.0

I =I =10mA, R =100Ω, Rec. to 1.0mA

4.0

♦ Enhanced specification

R3 (25-January 2010)

中文翻译

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CMPD2836ELEADFREE	CENTRAL	获取价格	暂无描述
CMPD2836EPBFREE	CENTRAL	获取价格	Rectifier Diode,
CMPD2836ETIN/LEAD	CENTRAL	获取价格	Rectifier Diode, 0.2A, 120V V(RRM),
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