Datasheet > CMOSH-4E_10

CMOSH-4E_10

更新时间： 2024-11-01 09:27:39

品牌	Logo	应用领域
CENTRAL		肖特基二极管
页数	文件大小	规格书
2页	414K
描述
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE

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CMOSH-4E_10 数据手册

CMOSH-4E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

SILICON SCHOTTKY DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMOSH-4E is an

Enhanced version of the CMOSH-3 Silicon Schottky

Diode in an SOD-523 Surface Mount Package.

MARKING CODE: 4E

ENHANCED SPECIFICATIONS:

♦ I from 100mA max to 200mA max.

♦ BV from 30V min to 40Vmin.

SOD-523 CASE

♦ V from 1.0V max to 0.8V max.

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=10ms

Power Dissipation

200

RRM

350

FRM

750

FSM

250

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

500

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =25V

MIN

TYP

MAX

500

UNITS

μA

V =25V, T =100°C

100

I =100µA

♦

I =2.0mA

0.29

0.37

0.61

0.65

7.0

0.33

0.42

0.80

1.0

♦^V

I =15mA

I =100mA

♦♦_VF

I =200mA

V =1.0V, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

5.0

♦ Enhanced specification.

♦♦ Additional Enhanced specification.

R2 (25-January 2010)

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