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CMLT3820 PDF预览

CMLT3820

更新时间: 2023-12-06 20:08:52
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 433K
描述
60V,1A,250mW Surface mount Transistor-Small Signal (<=1A) NPN Low VCE(SAT)

CMLT3820 数据手册

 浏览型号CMLT3820的Datasheet PDF文件第2页浏览型号CMLT3820的Datasheet PDF文件第3页 
CMLT3820G  
www.centralsemi.com  
SURFACE MOUNT SILICON  
VERY LOW V  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT3820G is  
a very low V NPN Transistor, designed for  
applications where small size and efficiency are the  
prime requirements. Packaged in a space saving  
SOT-563 surface mount package, this component  
provides performance characteristics suitable for the  
most demanding size constrained applications.  
CE(SAT)  
NPN TRANSISTOR  
CE(SAT)  
MARKING CODE: 38G  
FEATURES:  
SOT-563 CASE  
APPLICATIONS:  
Device is Halogen Free by design  
DC/DC Converters  
High Current (I =1.0A)  
Voltage Clamping  
C
V
=0.28V MAX @  
I =1.0A  
C
Protection Circuits  
Battery powered Cell Phones, Pagers,  
Digital Cameras, PDAs, Laptops, etc.  
CE(SAT)  
SOT563 surface mount package  
Complementary PNP device CMLT7820G  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
SYMBOL  
UNITS  
V
V
V
A
A
V
V
V
80  
60  
5.0  
1.0  
2.0  
CBO  
CEO  
EBO  
I
C
I
A
CM  
I
P
300  
250  
-65 to +150  
500  
mA  
mW  
°C  
B
D
T , T  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
I
V
V
=60V  
=5.0V  
nA  
nA  
V
V
V
V
V
V
V
CBO  
EBO  
CB  
EB  
BV  
BV  
BV  
I =100μA  
80  
60  
5.0  
CBO  
CEO  
EBO  
C
I =10mA  
C
I =100μA  
E
V
V
V
V
V
I =100mA, I =1.0mA  
0.115  
0.15  
0.28  
1.1  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
B
I =500mA, I =50mA  
C
I =1.0A, I =100mA  
C
B
B
I =1.0A, I =50mA  
C
V
=5.0V, I =1.0A  
0.9  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=5.0V, I =1.0mA  
200  
200  
100  
150  
C
=5.0V, I =500mA  
FE  
FE  
C
=5.0V, I =1.0A  
C
f
=10V, I =50mA  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
10  
ob  
E
R4 (29-June 2015)  

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