Datasheet > CMLT3820G_10

CMLT3820G_10

更新时间： 2024-02-17 02:19:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	514K
描述
SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR

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CMLT3820G_10 数据手册

CMLT3820G

www.centralsemi.com

SURFACE MOUNT

VERY LOW V

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT3820G is

a very low V NPN Transistor, designed for

CE(SAT)

applications where small size and efficiency are the

prime requirements. Packaged in a space saving

PICOmini™ SOT-563 surface mount package, this

component provides performance characteristics

suitable for the most demanding size constrained

applications.

MARKING CODE: 38G

SOT-563 CASE

APPLICATIONS:

FEATURES:

Device is Halogen Free by design

•

• DC/DC Converters

• High Current (I =1.0A)

Voltage Clamping

•

=0.28V MAX @

I =1.0A

•

Protection Circuits

Battery powered Cell Phones, Pagers,

Digital Cameras, PDAs, Laptops, etc.

CE(SAT)

PICOmini™ SOT563 surface mount package

Complementary PNP device CMLT7820G

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

UNITS

5.0

1.0

2.0

CBO

CEO

EBO

300

250

-65 to +150

500

°C

T , T

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

=60V

=5.0V

CBO

EBO

I =100µA

5.0

CBO

CEO

EBO

I =10mA

I =100µA

I =100mA, I =1.0mA

I =500mA, I =50mA

0.115

0.15

0.28

1.1

CE(SAT)

BE(SAT)

BE(ON)

I =1.0A, I =100mA

I =1.0A, I =50mA

=5.0V, I =1.0A

0.9

=5.0V, I =1.0mA

=5.0V, I =500mA

200

100

150

=5.0V, I =1.0A

=10V, I =50mA

MHz

=10V, I =0, f=1.0MHz

R2 (20-January 2010)

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