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CMLT3906EGTRLEADFREE PDF预览

CMLT3906EGTRLEADFREE

更新时间: 2024-02-25 15:54:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 517K
描述
Transistor

CMLT3906EGTRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.2 A
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):300 MHzBase Number Matches:1

CMLT3906EGTRLEADFREE 数据手册

 浏览型号CMLT3906EGTRLEADFREE的Datasheet PDF文件第2页 
CMLT3904E CMLT3904EG* NPN  
CMLT3906E CMLT3906EG* PNP  
CMLT3946E CMLT3946EG* NPN/PNP  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
DESCRIPTION:  
These CENTRAL SEMICONDUCTOR devices  
are combinations of dual, enhanced specification  
transistors in a space saving SOT-563 package,  
designed for small signal general purpose amplifier and  
switching applications.  
COMPLEMENTARY  
SILICON TRANSISTORS  
MARKING CODES: CMLT3904E:  
CMLT3906E:  
L04  
L06  
L46  
C4G  
C6G  
46G  
CMLT3946E:  
CMLT3904EG*:  
CMLT3906EG*:  
CMLT3946EG*:  
SOT-563 CASE  
Device is Halogen Free by design  
*
h  
from 60 MIN to 70 MIN (NPN/PNP)  
ENHANCED SPECIFICATIONS:  
FE  
V  
from 0.3V MAX to 0.2V MAX(NPN)  
from 0.4V MAX to 0.2V MAX(PNP)  
BV  
BV  
from 40V MIN to 60V MIN (PNP)  
from 5.0V MIN to 6.0V MIN (PNP)  
CE(SAT)  
CBO  
EBO  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
60  
40  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
6.0  
Continuous Collector Current  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
200  
mA  
mW  
mW  
mW  
°C  
C
P
P
P
350  
D
D
D
300  
150  
T , T  
-65 to +150  
357  
J
stg  
JA  
Θ
°C/W  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN  
PNP  
MAX  
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
-
TYP  
TYP  
UNITS  
nA  
I
V
-
-
50  
CEV  
CE  
I =10µA  
EB  
BV  
BV  
BV  
60  
40  
6.0  
-
115  
60  
90  
55  
-
V
V
V
V
V
V
V
CBO  
CEO  
C
I =1.0mA  
-
C
I =10µA  
7.5  
7.9  
-
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.057  
0.100  
0.75  
0.85  
240  
0.050 0.100  
0.100 0.200  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
-
C
B
I =10mA, I =1.0mA  
0.65  
-
0.75  
0.85  
130  
150  
150  
120  
55  
0.85  
C
B
I =50mA, I =5.0mA  
0.95  
C
B
h  
h  
h
V
=1.0V, I =0.1mA  
90  
100  
100  
70  
30  
-
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
=1.0V, I =1.0mA  
235  
-
FE  
C
=1.0V, I =10mA  
215  
300  
FE  
C
h
=1.0V, I =50mA  
110  
-
FE  
C
h
=1.0V, I =100mA  
50  
-
FE  
C
Enhanced Specification  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2  
R4 (20-January 2010)  

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