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CMLT3946E PDF预览

CMLT3946E

更新时间: 2024-02-03 21:46:07
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 112K
描述
ENHANCED SPECIFICATION COMPLEMENTARY PICOmini SILICON TRANSISTORS

CMLT3946E 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.21Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

CMLT3946E 数据手册

 浏览型号CMLT3946E的Datasheet PDF文件第2页 
TM  
CMLT3904E NPN  
CMLT3906E PNP  
CMLT3946E NPN/PNP  
Central  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
DESCRIPTION:  
TM  
COMPLEMENTARY PICOmini  
The Central Semiconductor CMLT3904E (two single  
NPN), CMLT3906E (two single PNP), and  
SILICON TRANSISTORS  
CMLT3946E  
(one  
each  
NPN  
and  
PNP  
complementary) are combinations of enhanced  
specification transistors in a space saving SOT-563  
package, designed for small signal general purpose  
amplifier and switching applications.  
ENHANCED SPECIFICATIONS:  
BV  
BV  
from 40V min to 60V min. (PNP)  
from 5.0V min to 6.0V min. (PNP)  
CBO  
EBO  
SOT-563 CASE  
V  
from 0.3V max to 0.2V max.(NPN),  
CE(SAT)  
from 0.4V max to 0.2V max.(PNP)  
from 60 min to 70 min. (NPN/PNP)  
MARKING CODES: CMLT3904E: L04  
CMLT3906E: L06  
h  
FE  
CMLT3946E: L46  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Power Dissipation  
Power Dissipation  
V
V
V
60  
40  
6.0  
200  
350  
300  
150  
CBO  
CEO  
EBO  
I
mA  
C
P
P
P
mW (Note 1)  
mW (Note 2)  
mW (Note 3)  
D
D
D
Power Dissipation  
Operating and Storage  
Junction Temperature  
T , T  
stg  
-65 to +150  
357  
°C  
°C/W  
J
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
NPN  
TYP  
-
PNP  
TYP  
-
90  
55  
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
-
60  
40  
6.0  
MAX  
50  
-
UNITS  
nA  
V
I
V
CEV  
CBO  
CEO  
EBO  
CE  
I =10µA  
EB  
BV  
BV  
BV  
115  
60  
7.5  
0.057  
0.100  
0.75  
0.85  
240  
235  
C
I =1.0mA  
-
V
C
I =10µA  
E
C
7.9  
V
V
V
V
V  
V  
V
I =10mA, I =1.0mA  
0.050  
0.100  
0.75  
0.85  
130  
150  
0.100  
0.200  
0.85  
CE(SAT)  
B
I =50mA, I =5.0mA  
CE(SAT  
C
B
)
I =10mA, I =1.0mA  
0.65  
BE(SAT  
BE(SAT  
FE  
C
C
B
B
)
)
V
I =50mA, I =5.0mA  
0.95  
V
h
h  
V
V
=1.0V, I =0.1mA  
90  
100  
CE  
CE  
C
=1.0V, I =1.0mA  
FE  
C
Enhanced specification.  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2  
R2 (13-December 2003)  

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