5秒后页面跳转
CMLT5078E_10 PDF预览

CMLT5078E_10

更新时间: 2024-01-12 09:07:06
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 520K
描述
SURFACE MOUNT SILICON DUAL TRANSISTORS

CMLT5078E_10 数据手册

 浏览型号CMLT5078E_10的Datasheet PDF文件第2页 
CMLT5078E NPN/PNP  
CMLT5087E PNP/PNP  
CMLT5088E NPN/NPN  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
SILICON DUAL TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT5078E,  
CMLT5087E, and CMLT5088E, are Silicon transistors  
in a PICOmini™ surface mount package with enhanced  
specifications designed for applications requiring high  
gain and low noise.  
MARKING CODE & CONFIGURATION:  
CMLT5078E: DUAL, COMPLEMENTARY: L78  
CMLT5087E: DUAL, PNP: L87  
CMLT5088E: DUAL, NPN: L88  
SOT-563 CASE  
o
MAXIMUM RATINGS: (T =25 C)  
SYMBOL  
UNITS  
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
50  
50  
5.0  
100  
350  
CBO  
CEO  
EBO  
V
I
mA  
mW  
C
P
D
o
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
C
J
stg  
o
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25 C unless otherwise noted)  
A
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
NPN  
PNP  
MAX  
50  
UNITS  
nA  
nA  
V
I
I
V
V
=20V  
CBO  
CB  
EB  
=3.0V  
50  
EBO  
BV  
BV  
I =100µA  
50  
50  
135  
65  
150  
105  
7.5  
CBO  
CEO  
EBO  
C
I =1.0mA  
C
V
BV  
I =100µA  
5.0  
8.7  
V
E
V
I =10mA, I =1.0mA  
45  
50  
100  
400  
800  
900  
mV  
mV  
mV  
CE(SAT)  
CE(SAT)  
BE(SAT)  
C
B
V
V
h
I =100mA, I =10mA  
110  
700  
430  
435  
430  
125  
225  
700  
390  
380  
350  
75  
♦♦  
C
B
I =10mA, I =1.0mA  
C
B
V
=5.0V, I =0.1mA  
300  
300  
300  
50  
FE  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
C
h
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
C
FE  
h
h
f
=5.0V, I =10mA  
♦♦  
FE  
FE  
C
=5.0V, I =100mA  
C
=5.0V, I =500µA, f=20MHz  
100  
MHz  
pF  
T
C
C
=5.0V, I =0, f=1.0MHz  
E
4.0  
15  
ob  
ib  
C
=0.5V, I =0, f=1.0MHz  
pF  
C
h
=5.0V, I =1.0mA, f=1.0kHz  
350  
1400  
fe  
C
NF  
=5.0V, I =100μA, R =10kΩ,  
C S  
f=10Hz to 15.7kHz  
Enhanced specification.  
♦♦ Additional Enhanced specification.  
3.0  
dB  
R3 (20-January 2010)  

与CMLT5078E_10相关器件

型号 品牌 获取价格 描述 数据表
CMLT5078EBK CENTRAL

获取价格

暂无描述
CMLT5078EBKTIN/LEAD CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP
CMLT5078ELEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
CMLT5078ETIN/LEAD CENTRAL

获取价格

Small Signal Bipolar Transistor,
CMLT5078ETR CENTRAL

获取价格

暂无描述
CMLT5078ETRLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP
CMLT5078ETRPBFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP,
CMLT5078ETRTIN/LEAD CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP
CMLT5087E CENTRAL

获取价格

ENHANCED SPECIFICATION PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS
CMLT5087EBK CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PICOMIN