是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.6 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.86 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMLDM8120GTRR | CENTRAL |
获取价格 |
Transistor | |
CMLDM8120GTRRLEADFREE | CENTRAL |
获取价格 |
Transistor | |
CMLDM8120GTRRPBFREE | CENTRAL |
获取价格 |
Transistor, | |
CMLDM8120GTRRTIN/LEAD | CENTRAL |
获取价格 |
Transistor | |
CMLDM8120GTRTIN/LEAD | CENTRAL |
获取价格 |
Transistor | |
CMLDM8120LEADFREE | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Meta | |
CMLDM8120T | CENTRAL |
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860mA,20V Surface mount MOSFET P-Channel Enhancement Mode | |
CMLDM8120TG | CENTRAL |
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SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMLDM8120TGTRLEADFREE | CENTRAL |
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Transistor | |
CMLDM8120TGTRPBFREE | CENTRAL |
获取价格 |
Transistor, |