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CMLDM8120TG

更新时间： 2024-11-11 12:20:39

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	517K
描述
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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CMLDM8120TG 数据手册

CMLDM8120TG

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM8120TG

is an Enhancement-mode P-Channel Field Effect

Transistor, manufactured by the P-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. This MOSFET offers Low r

and a MAX Threshold Voltage of 0.85V.

DS(ON)

MARKING CODE: CT8

SOT-563 CASE

FEATURES:

Device is Halogen Free by design

•

APPLICATIONS:

Low r

DS(ON)

Load/Power switches

•

MAX Threshold Voltage (0.85V)

Logic level compatibility

Power supply converter circuits

Battery powered portable equipment

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current, t≤5.0s

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current, tp=10μs

Maximum Pulsed Source Current, tp=10μs

Power Dissipation (Note 1)

SYMBOL

UNITS

8.0

860

950

360

4.0

350

300

°C

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

150

T , T

-65 to +150

stg

Thermal Resistance

357

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=8.0V, V =0

1.0

5.0

500

GSSF GSSR

DSS

=20V, V =0

=0, I =250μA

0.45

DSS

GS(th)

=V , I =250μA

0.85

0.9

0.15

DS GS

=0 I =360mA

=4.5V, I =0.95A

0.085

0.13

DS(ON)

=4.5V, I =0.77A

0.142

0.20

0.24

DS(ON)

=2.5V, I =0.67A

=1.8V, I =0.20A

0.19

=1.2V, I =0.10A

0.60

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²

R2 (2-August 2011)

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