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CMH01(T2L,HITJ,X)

更新时间： 2024-11-20 21:21:31
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
5页 364K
描述
Rectifier Diode

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CMH01(T2L,HITJ,X) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.73二极管类型：RECTIFIER DIODE
Base Number Matches：1

CMH01(T2L,HITJ,X) 数据手册

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CMH01  
High-Efficiency Diode (HED) Silicon Epitaxial Type  
CMH01  
○ Radio-Frequency Rectification in Switching Regulators  
Unit: mm  
•
•
•
•
•
Repetitive peak reverse voltage : V  
= 200 V  
= 3.0 A  
= 0.98 V (max)  
RRM  
Average forward current  
Peak forward voltage  
: I  
: V  
F (AV)  
FM  
Very Fast Reverse-Recovery Time: trr = 35 ns (max)  
Suitable for high-density board assembly due to the use of a small  
TM  
Toshiba Nickname: M−FLAT  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
1
2
ANODE  
CATHODE  
Repetitive peak reverse voltage  
Average forward current  
V
200  
V
A
A
RRM  
I
3.0 (Note 1)  
40 (50 Hz)  
F (AV)  
Non-repetitive peak forward surge current  
Junction temperature  
I
FSM  
T
−40 to 150  
−40 to 150  
°C  
°C  
j
JEDEC  
JEITA  
―
―
Storage temperature range  
T
stg  
Note 1: Tℓ = 96°C Device mounted on a ceramic board  
board size : 50 mm × 50 mm  
Soldering land size : 2 mm × 2 mm  
board thickness : 0.64 mm  
TOSHIBA  
3-4E1S  
Weight: 0.023 g (typ.)  
Note2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.1 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.64  
0.80  
0.90  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
= 1.0 A (pulse test)  
= 3.0 A (pulse test)  
0.98  
10  
Repetitive peak reverse current  
Reverse recovery time  
I
V
= 200 V (pulse test)  
RRM  
μA  
ns  
ns  
RRM  
t
I
I
= 1 A, di/dt = −30 A/µs  
= 1 A  
35  
rr  
F
F
Forward recovery time  
t
100  
fr  
Device mounted on a ceramic board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
2 mm × 2 mm  
0.64 mm  
60  
Device mounted on a glass-epoxy board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
6 mm × 6 mm  
1.6 mm  
Thermal resistance  
(junction to ambient)  
R
135  
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
2.1 mm × 1.4 mm  
1.6 mm  
210  
16  
Thermal resistance (junction to lead)  
R
th (j-ℓ)  
Start of commercial production  
2002-12  
1
2018-10-01  
12345

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