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CMH02A PDF预览

CMH02A

更新时间: 2024-11-24 03:25:59
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管开关光电二极管
页数 文件大小 规格书
5页 174K
描述
Switching Mode Power Supply Applications

CMH02A 技术参数

生命周期:Not Recommended包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.55Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.8 VJESD-30 代码:R-PDSO-F2
JESD-609代码:e0最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:35 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUALBase Number Matches:1

CMH02A 数据手册

 浏览型号CMH02A的Datasheet PDF文件第2页浏览型号CMH02A的Datasheet PDF文件第3页浏览型号CMH02A的Datasheet PDF文件第4页浏览型号CMH02A的Datasheet PDF文件第5页 
CMH02A  
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type  
CMH02A  
Switching Mode Power Supply Applications  
Unit: mm  
Repetitive peak reverse voltage: V  
= 400 V  
RRM  
Average forward current: I  
= 3.0 A  
F (AV)  
Low forward voltage: V =1.8 V (Max.)  
FM  
Very fast reverse recovery time: trr =35ns (Max.)  
Suitable for compact assembly due to small surface-mount package  
TM  
“MFLAT ” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
400  
V
A
RRM  
I
3.0 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
30 (50 Hz)  
A
FSM  
Junction temperature  
T
40~150  
40~150  
°C  
°C  
j
Storage temperature range  
T
stg  
Note 1: T77°C Device mounted on a ceramic board  
board size: 50 mm × 50 mm  
soldering land: 2 mm ×2 mm  
board thickness:0.64t  
JEDEC  
JEITA  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.1 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.78  
1.1  
1.4  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
= 1.0 A (pulse test)  
= 3.0 A (pulse test)  
1.8  
10  
Peak repetitive reverse current  
Reverse recovery time  
I
V
= 400 V (pulse test)  
RRM  
μA  
ns  
ns  
RRM  
t
I
I
= 1 A, di/dt = 30 A/μs  
= 1.0 A  
35  
rr  
F
F
Forward recovery time  
t
fr  
100  
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
60  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
135  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 t)  
210  
16  
Thermal resistance  
(junction to lead)  
R
th (j-)  
°C/W  
1
2006-11-08  

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