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CMH02(TE12L,Q)

更新时间： 2024-11-24 21:05:03
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 196K
描述
DIODE HI EFF 400V 3A M-FLAT

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中文翻译

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CMH02(TE12L,Q) 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.74
Base Number Matches：1

CMH02(TE12L,Q) 数据手册

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CMH02  
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type  
CMH02  
Switching Mode Power Supply Applications  
Unit: mm  
•
•
•
•
•
Repetitive peak reverse voltage: V  
= 400 V  
RRM  
Average forward current: I  
= 3.0 A  
F (AV)  
Low forward voltage: V =1.3 V (Max.)  
FM  
Very fast reverse recovery time: trr =50ns (Max.)  
Suitable for compact assembly due to small surface-mount package  
TM  
“M−FLAT ” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
400  
V
A
RRM  
I
3.0 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
40 (50 Hz)  
A
FSM  
Junction temperature  
T
−40~150  
−40~150  
°C  
°C  
j
Storage temperature range  
T
stg  
Note 1: Tℓ＝87°C Device mounted on a ceramic board  
board size: 50 mm × 50 mm  
JEDEC  
JEITA  
―
―
soldering land: 2 mm ×2 mm  
board thickness:0.64t  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.1 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
⎯
⎯
⎯
⎯
⎯
⎯
0.73  
0.93  
1.1  
⎯
⎯
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
= 1.0 A (pulse test)  
= 3.0 A (pulse test)  
1.3  
10  
Peak repetitive reverse current  
Reverse recovery time  
I
V
= 400 V (pulse test)  
RRM  
μA  
ns  
ns  
RRM  
t
I
I
= 1 A, di/dt = −30 A/μs  
= 1.0 A  
⎯
50  
rr  
F
F
Forward recovery time  
t
fr  
⎯
100  
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
⎯
⎯
⎯
⎯
60  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
135  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 t)  
⎯
⎯
⎯
⎯
210  
16  
Thermal resistance  
(junction to lead)  
⎯
R
th (j-ℓ)  
°C/W  
Start of commercial production  
2002-12  
1
2013-11-01  
12345

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