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CMH02

更新时间： 2024-11-20 03:25:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 185K
描述
Switching Mode Power Supply Applications

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中文翻译

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CMH02 技术参数

生命周期：Not Recommended包装说明：R-PDSO-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.55应用：GENERAL PURPOSE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.3 V
JESD-30 代码：R-PDSO-F2JESD-609代码：e0
最大非重复峰值正向电流：40 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-40 °C
最大输出电流：3 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified最大重复峰值反向电压：400 V
最大反向恢复时间：0.05 µs子类别：Rectifier Diodes
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
Base Number Matches：1

CMH02 数据手册

 浏览型号CMH02的Datasheet PDF文件第2页浏览型号CMH02的Datasheet PDF文件第3页浏览型号CMH02的Datasheet PDF文件第4页浏览型号CMH02的Datasheet PDF文件第5页 
CMH02  
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type  
CMH02  
Switching Mode Power Supply Applications  
Unit: mm  
•
•
•
•
•
Repetitive peak reverse voltage: V  
= 400 V  
RRM  
Average forward current: I  
= 3.0 A  
F (AV)  
Low forward voltage: V =1.3 V (Max.)  
FM  
Very fast reverse recovery time: trr =50ns (Max.)  
Suitable for compact assembly due to small surface-mount package  
TM  
“M−FLAT ” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
400  
V
A
RRM  
I
3.0 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
40 (50 Hz)  
A
FSM  
Junction temperature  
T
−40~150  
−40~150  
°C  
°C  
j
Storage temperature range  
T
stg  
Note 1: Tℓ＝87°C Device mounted on a ceramic board  
board size: 50 mm × 50 mm  
JEDEC  
JEITA  
―
―
soldering land: 2 mm ×2 mm  
board thickness:0.64t  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.1 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
⎯
⎯
⎯
⎯
⎯
⎯
0.73  
0.93  
1.1  
⎯
⎯
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
= 1.0 A (pulse test)  
= 3.0 A (pulse test)  
1.3  
10  
Peak repetitive reverse current  
Reverse recovery time  
I
V
= 400 V (pulse test)  
RRM  
μA  
ns  
ns  
RRM  
t
I
I
= 1 A, di/dt = −30 A/μs  
= 1.0 A  
⎯
50  
rr  
F
F
Forward recovery time  
t
fr  
⎯
100  
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
⎯
⎯
⎯
⎯
60  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
135  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 t)  
⎯
⎯
⎯
⎯
210  
16  
Thermal resistance  
(junction to lead)  
R
th (j-ℓ)  
⎯
°C/W  
1
2006-11-08  
12345

中文翻译

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