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CMDD4448BKLEADFREE PDF预览

CMDD4448BKLEADFREE

更新时间: 2024-11-01 21:21:07
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 361K
描述
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM),

CMDD4448BKLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:4 A
元件数量:1最高工作温度:150 °C
最大输出电流:0.25 A最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

CMDD4448BKLEADFREE 数据手册

 浏览型号CMDD4448BKLEADFREE的Datasheet PDF文件第2页 
CMDD4448  
www.centralsemi.com  
SURFACE MOUNT  
HIGH SPEED SILICON  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMDD4448 type is  
a ultra-high speed silicon switching diode manufactured  
by the epitaxial planar process, epoxy molded in a  
TM  
SUPERmini surface mount package, designed for  
high speed switching applications.  
MARKING CODE: 44  
SOD-323 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
R
75  
100  
V
V
RRM  
I
250  
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
500  
FRM  
I
4.0  
FSM  
I
1.0  
A
FSM  
P
275  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +175  
545  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
nA  
V
I
V =20V  
25  
R
R
BV  
I =5.0μA  
R
75  
R
BV  
R
I =100μA  
100  
0.62  
V
R
V
I =5.0mA  
F
0.72  
1.0  
4.0  
4.0  
V
F
V
F
C
I =100mA  
V
F
V =0, f=1.0MHz  
R
pF  
ns  
T
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
rr  
R
F
L
R6 (8-January 2010)  

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