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CMDD6001TRPBFREE PDF预览

CMDD6001TRPBFREE

更新时间: 2024-11-02 05:32:59
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 361K
描述
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM),

CMDD6001TRPBFREE 数据手册

 浏览型号CMDD6001TRPBFREE的Datasheet PDF文件第2页 
CMDD6001  
www.centralsemi.com  
SURFACE MOUNT  
ULTRA LOW LEAKAGE  
SILICON SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMDD6001 type is  
a silicon switching diode manufactured by the epitaxial  
TM  
planar process, epoxy molded in a SUPERmini surface  
mount package, designed for switching applications  
requiring a extremely low leakage diode.  
MARKING CODE: C61  
SOD-323 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
75  
100  
R
V
V
mA  
mA  
A
RRM  
I
250  
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
250  
FRM  
I
4.0  
FSM  
FSM  
I
1.0  
A
P
250  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =75V  
MIN  
MAX  
500  
UNITS  
pA  
I
R
R
BV  
I =100μA  
100  
V
V
R
R
V
V
V
I =1.0mA  
0.85  
0.95  
1.1  
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
2.0  
pF  
μs  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
3.0  
rr  
R
F
rr  
L
R5 (9-May 2011)  

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