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CM75DY-12H PDF预览

CM75DY-12H

更新时间: 2024-11-05 22:18:03
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管电动机控制双极性晶体管局域网高功率电源超快速恢复二极管
页数 文件大小 规格书
4页 51K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM75DY-12H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:N其他特性:SUPER FAST RECOVERY
外壳连接:ISOLATED最大集电极电流 (IC):75 A
集电极-发射极最大电压:600 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
元件数量:2端子数量:7
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):310 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):500 ns
标称接通时间 (ton):420 nsVCEsat-Max:2.8 V
Base Number Matches:1

CM75DY-12H 数据手册

 浏览型号CM75DY-12H的Datasheet PDF文件第2页浏览型号CM75DY-12H的Datasheet PDF文件第3页浏览型号CM75DY-12H的Datasheet PDF文件第4页 
MITSUBISHI IGBT MODULES  
CM75DY-12H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
A
B
C
F
F
K
Q - DIA.  
(2 TYP.)  
M
J
D
C2E1  
E2  
C1  
R
N
S - M5 THD  
(3 TYP.)  
Description:  
(3 TYP.)  
R
Mitsubishi IGBT Modules are de-  
signed for use in switching applica-  
tions. Each module consists of two  
IGBTs in a half-bridge configuration  
with each transistor having a re-  
verse-connected super-fast recov-  
ery free-wheel diode. All compo-  
nents and interconnects are iso-  
lated from the heat sinking base-  
plate, offering simplified system as-  
sembly and thermal management.  
R
H
TAB#110 t=0.5  
H
L
P
E
G
Features:  
ٗ Low Drive Power  
G2  
E2  
ٗ Low V  
CE(sat)  
ٗ Discrete Super-Fast Recovery  
Free-Wheel Diode  
C2E1  
E2  
C1  
ٗ High Frequency Operation  
ٗ Isolated Baseplate for Easy  
E1  
G1  
Heat Sinking  
Applications:  
ٗ AC Motor Control  
ٗ Motion/Servo Control  
ٗ UPS  
ٗ Welding Power Supplies  
Outline Drawing and Circuit Diagram  
Dimensions  
Inches  
3.70  
Millimeters  
Dimensions  
Inches  
0.67  
0.63  
0.51  
0.47  
0.28  
Millimeters  
17.0  
A
B
C
D
E
F
94.0  
80.0±0.25  
40.0  
K
L
Ordering Information:  
3.150±0.01  
1.57  
16.0  
Example: Select the complete part  
module number you desire from  
the table below -i.e. CM75DY-12H  
M
N
P
Q
R
S
13.0  
1.34  
34.0  
12.0  
is a 600V (V  
IGBT Module.  
), 75 Ampere Dual  
CES  
1.22 Max.  
0.90  
31.0 Max.  
23.0  
7.0  
0.256 Dia.  
0.16  
Dia. 6.5  
4.0  
Type  
Current Rating  
V
CES  
G
H
J
0.85  
21.5  
Amperes  
Volts (x 50)  
0.79  
20.0  
M5 Metric  
M5  
CM  
75  
12  
0.71  
18.0  
Sep.1998  

CM75DY-12H 替代型号

型号 品牌 替代类型 描述 数据表
CM75DU-12F MITSUBISHI

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CM75DU-12H POWEREX

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Dual IGBTMOD 75 Amperes/600 Volts
CM75DU-12F POWEREX

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Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/6

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