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CM75DY-28H PDF预览

CM75DY-28H

更新时间: 2024-11-16 22:18:03
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管电动机控制双极性晶体管局域网高功率电源超快速恢复二极管
页数 文件大小 规格书
4页 51K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM75DY-28H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code:unknown风险等级:5.84
其他特性:SUPER FAST RECOVERY外壳连接:ISOLATED
最大集电极电流 (IC):75 A集电极-发射极最大电压:1400 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):600 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):750 ns标称接通时间 (ton):500 ns
VCEsat-Max:4.2 VBase Number Matches:1

CM75DY-28H 数据手册

 浏览型号CM75DY-28H的Datasheet PDF文件第2页浏览型号CM75DY-28H的Datasheet PDF文件第3页浏览型号CM75DY-28H的Datasheet PDF文件第4页 
MITSUBISHI IGBT MODULES  
CM75DY-28H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
A
B
C
F
F
K
Q - DIA.  
(2 TYP.)  
M
J
D
C2E1  
E2  
C1  
Description:  
R
N
S - M5 THD  
(3 TYP.)  
Mitsubishi IGBT Modules are de-  
signed for use in switching appli-  
cations. Each module consists of  
two IGBTs in a half-bridge configu-  
ration with each transistor having  
a reverse-connected super-fast re-  
covery free-wheel diode. All com-  
ponents and interconnects are iso-  
lated from the heat sinking base-  
plate, offering simplified system  
assembly and thermal manage-  
ment.  
(3 TYP.)  
R
R
H
TAB#110 t=0.5  
H
L
P
E
G
Features:  
ٗ Low Drive Power  
G2  
E2  
ٗ Low V  
CE(sat)  
ٗ Discrete Super-Fast Recovery  
Free-Wheel Diode  
C2E1  
E2  
C1  
ٗ High Frequency Operation  
ٗ Isolated Baseplate for Easy  
Heat Sinking  
E1  
G1  
Applications:  
ٗ AC Motor Control  
Outline Drawing and Circuit Diagram  
ٗ Motion/Servo Control  
ٗ UPS  
Dimensions  
Inches  
3.70  
Millimeters  
94.0  
Dimensions  
Inches  
Millimeters  
17.0  
A
B
C
D
E
F
K
L
0.67  
0.63  
ٗ Welding Power Supplies  
3.150±0.01  
1.57  
80.0±0.25  
40.0  
16.0  
Ordering Information:  
M
N
P
Q
R
S
0.51  
13.0  
Example: Select the complete part  
module number you desire from  
the table below -i.e. CM75DY-28H  
1.34  
34.0  
0.47  
12.0  
1.22 Max.  
0.90  
31.0 Max.  
23.0  
0.28  
7.0  
is a 1400V (V  
Dual IGBT Module.  
), 75 Ampere  
CES  
0.256 Dia.  
0.16  
Dia. 6.5  
4.0  
G
H
J
0.85  
21.5  
Type  
Current Rating  
Amperes  
V
CES  
Volts (x 50)  
0.79  
20.0  
M5 Metric  
M5  
0.71  
18.0  
CM  
75  
28  
Sep.1998  

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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C)