Datasheet > CM75MXUB-24T1

CM75MXUB-24T1

更新时间： 2024-11-18 20:37:47

品牌	Logo	应用领域
三菱 - MITSUBISHI		栅
页数	文件大小	规格书
20页	1858K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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CM75MXUB-24T1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.57	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CM75MXUB-24T1 数据手册

CM75MXUB-24T1/CM75MXUBP-24T1

HIGH POWER SWITCHING USE

INSULATED TYPE

Collector current I_C.............…..................…

7 5 A

Collector-emitter voltage V_CES.................. 1 2 0 0 V

Maximum junction temperature T_{vj m ax}......... 1 7 5 °C

●Flat base type

MXUB

●Copper base plate (Nickel-plating)

●RoHS Directive compliant

●Tin-plating pin terminals

Collector current I_C.............…..................…

7 5 A

Collector-emitter voltage V_CES.................. 1 2 0 0 V

Maximum junction temperature T_{vj m ax}......... 1 7 5 °C

●Flat base type

MXUBP

●Copper base plate (Nickel-plating)

●RoHS Directive compliant

●Tin-plating pressfit terminals

CIB (Converter+Inverter+Chopper Brake)

●UL Recognized under UL1557, File No. E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OPTION (Below options are available.)

●PC-TIM (Phase Change Thermal Interface Material) pre-apply

INTERNAL CONNECTION

Terminal code

16 TH1

17 TH2

18 GwN

19 GvN

20 E

31 N

TH1(16)

TH2(17)

P(28,29)

P1(25,26)

GuP(7)

GvP(10)

GwP(15)

21 GuN

22 GB

23 N1

24 N1

25 P1

GuP

B(27)

U(8,9)

V(11,12)

GwN(18)

W(13,14)

R(1,2)

S(3,4)

T(5,6)

GvP

GB(22)

GuN(21)

GvN(19)

26 P1

N(30,31)

N1(23,24)

13 W

E(20)

GwP

30 N

Publication Date : June 2018

CMH-11866

Ver.1.0

12 3 4 5 6 7...20

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