生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X20 | 针数: | 20 |
Reach Compliance Code: | unknown | 风险等级: | 5.23 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 600 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X20 |
元件数量: | 6 | 端子数量: | 20 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 430 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | VCEsat-Max: | 2.2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CM75TL-24NF | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE | |
CM75TL-24NF_09 | MITSUBISHI |
获取价格 |
IGBT MODULES HIGH POWER SWITCHING USE | |
CM75TU-12F | POWEREX |
获取价格 |
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/60 | |
CM75TU-12F | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE | |
CM75TU-12F_09 | MITSUBISHI |
获取价格 |
IGBT MODULES HIGH POWER SWITCHING USE | |
CM75TU-12H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
CM75TU-12H | POWEREX |
获取价格 |
Six IGBTMOD 75 Amperes/600 Volts | |
CM75TU-12H_09 | MITSUBISHI |
获取价格 |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | |
CM75TU-24F | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE | |
CM75TU-24F | POWEREX |
获取价格 |
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/12 |