是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | Is Samacsys: | N |
最大集电极电流 (IC): | 410 A | 集电极-发射极最大电压: | 1200 V |
门极-发射极最大电压: | 20 V | 元件数量: | 1 |
最高工作温度: | 150 °C | 最大功率耗散 (Abs): | 3330 W |
子类别: | Insulated Gate BIP Transistors | VCEsat-Max: | 2.25 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CM450DY-24T | MITSUBISHI |
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IGBT模块 T系列 CM450DY-24T | |
CM450HA5F | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 100A I(C) | |
CM450HA-5F | MITSUBISHI |
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HIGH POWER SWITCHING USE INSULATED TYPE | |
CM450HA-5F | POWEREX |
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Trench Gate Design Single IGBTMOD⑩ 450 Ampere | |
CM450HA-5F_00 | MITSUBISHI |
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IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | |
CM45-28 | ASI |
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NPN SILICON RF POWER TRANSISTOR | |
CM4-53 | ETC |
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Optoelectronic | |
CM4532100KL | ABC |
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WOUND CHIP INDUCTOR | |
CM4532101KL | ABC |
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WOUND CHIP INDUCTOR | |
CM4532101KLD | ABC |
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General Purpose Inductor, 100uH, 10%, Ferrite-Core, 1812, |