Datasheet > CM4435

CM4435

更新时间： 2024-09-11 17:15:23

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1220K
描述
SO-8

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CM4435 数据手册

CM4435

P-Channel 30V (D-S) Power MOSFET

Description

Applications

The CM4435 is the P-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: -30V

ID: -8.5A

Marking Code = CM4435

Date Code = XXXX

CM4435

XXXX

RDS_ON(@VGS=-10V) : < 23mΩ

RDS_ON(@VGS=-4.5V) : < 34mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SO-8

Part Number

Packaging

2500/Tape & Reel

Reel Size

CM4435

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-30

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TA=25°C

TA=70°C

-8.5

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

-6.8

IDM

-34

Total Power Dissipation @ TA=25°C ⁽²⁾

2.5

Thermal Resistance Junction-to-Ambient ⁽²⁾

RθJA

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Mar. 2020, Rev. 1.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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