Datasheet > CJM1206-G

CJM1206-G

更新时间： 2024-11-06 01:25:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
5页	132K
描述
MOSFET

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数据手册

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CJM1206-G 数据手册

MOSFET

Comchip

S M D D i o d e S p e c i a l i s t

CJM1206-G (P-Channel )

RoHS Device

V(BR)DSS

RDS(on)MAX

45mΩ @ -4.5V

60mΩ @ -2.5V

90mΩ @ -1.8V

-12V

-6A

DFNWB2*2-6L-J

Features

- P-Channel -12V(D-S) power MOSFET

- Advanced trench MOSFET process technology

- Ultra low on-resistance with low gate charge

0.082(2.076)

0.076(1.924)

0.082(2.076)

0.076(1.924)

Mechanical data

- Case: DFNEB2*2-6L-J, molded plastic.

0.002(0.05)

0.000(0.00)

0.026(0.65)TYP.

0.035(0.90)

0.028(0.70)

0.008(0.20)

REF.

Circuit diagram

- 1. DRAIN

- 2. DRAIN

- 3. GATE

- 4. SOURCE

- 5. DRAIN

- 6. DRAIN

0.008(0.20)

0.013(0.326)

0.007(0.174)

MIN.

0.026(0.66)

0.018(0.46)

0.041(1.05)

0.033(0.85)

0.008(0.40)

0.016(0.20)

0.039(1.00)

0.031(0.80)

0.014(0.35)

0.010(0.25)

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25 °C unless otherwise noted)

Symbol

Parameter

Value

Unit

Drain-source voltage

Gate-source voltage

VDS

VGS

-12

±8

-6

Drain current-continuous

Drain current-pulsed

IDM*

-20

Power dissipation

RΘJA

2.5

°C/W

°C

Thermal resistance from junction to ambient

Junction temperature range

Storage temperature range

357

-40 to +150

-55 to +150

TSTG

°C

* Repetitive rating: Pluse width limited by junction temperature

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

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Comchip Technology CO., LTD.

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