Datasheet > CJMNT30

CJMNT30

更新时间： 2024-11-06 14:51:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	5309K
描述
DFNWB2×2-6L-SA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CJMNT30 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFNWB2×2-6L-SA Power Management Transistors-MOSFET

PNP Power Transistor with N-MOSFET

CJMNT30

I_D/I_C

V_(BR)DSS/VR

R_DS(on)MAX

DFNWB2×2-6L-SA

Ω@4.5V

360m

20V

0.69A

Ω@2.5V

Ω@1.8V

410m

480m

-30V

-2

FEATURES

APPLICATIONS

z Ultra low collector-to-emitter saturation voltage

z High DC current gain

z Charging circuit

z Other power management in portable equipments

z Small package DFNWB2x2-6L-SA

Equivalent circuit

MARKING: 30

N 1

N 3

30 = Device code

YY=Code

N 6

4 N

PIN1

TOP VIEW

BOTTOM VIEW

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

PNP Transistor

V_CBO

V_CEO

V_EBO

Collector-Base Voltage

Collector-Emitter Voltage

-30

-6

Emitter-Base Voltage

Collector Current-Continuous(Note1)

Collector Current-Continuous(Note2)

Collector Current-Pulse(Note3)

-3

I_C

-2

I_CM

N-MOSFET

V_DS

-6

Drain-Source Voltage

±6

V_GS

Gate-Source Voltage

Drain Current -Continuous(Note1)

Drain Current -Continuous(Note2)

Drain Current - Pulse(Note3)

0.8

0.69

1.4

I_D

I_DM

Power Dissipation, Temperature and Thermal Resistance

0.7

2.5

P_D

Power Dissipation

Power Dissipation (Tc=25 ,Note1)

℃

Thermal Resistance from Junction to Ambient

R_θJA

179

℃/W

O peration Junction and

S torage T em perature R ange

T _J,T _{s tg}

-55~ + 150

℃

T_L

Lead Temperature

260

www.jscj-elec.com

Rev. - 2.0

12 3 4 5 6

中文翻译

下载PDF

与CJMNT30相关器件

型号	品牌	获取价格	描述	数据表
CJMNT31	CJ	获取价格	DFNWB2×2-6L-I
CJMNT32	CJ	获取价格	DFNWB2×2-6L-U
CJMNT33	CJ	获取价格	DFNWB2×2-6L-I
CJMNT34	CJ	获取价格	DFNWB2×2-6L-SA
CJMP06	CJ	获取价格	DFNWB2x2-6L-A
CJMP2011	CJ	获取价格	DFNWB2×2-6L
CJMP3009	CJ	获取价格	DFNWB2×2-6L
CJMP3009G	CJ	获取价格	DFNWB2×2-6L
CJMPD08	CJ	获取价格	DFNWB2×2-6L
CJMPD11	CJ	获取价格	DFNWB2×2-6L