Datasheet > CJM1208

CJM1208

更新时间： 2024-11-25 14:52:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1277K
描述
DFNWB2×2-6L

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中文翻译

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数据手册

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CJM1208 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFNWB2×2-6L Plastic-Encapsulate MOSFETS

CJM1208 P-Channel MOSFET

I_D

V^(BR)DSS

RDS(on)TYP

22mΩ@-4.5V

24mΩ@-3.7V

28mΩ@-2.5V

40mΩ@-1.8V

50mΩ@-1.5V

DFNWB2×2-6L

-8A

-12V

FEATURE

APPLICATION



PWM application



Advanced trench MOSFET process technology

Ultra low on-resistance with low gate charge

Load switch

Battery charge in cellular handset

Equivalent Circuit

MARKING:

1208 = Part No.

1208

Solid dot = Pin1 indicator.

XX = Code.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Value

-12

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

Drain Current-Continuous

I_D

-8

Drain Current-Pulsed

I_DM

-28

℃/W

℃

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

R_θJA

357

T_J,T_STG

-55 ~+150

*Repetitive rating：Pluse width limited by junction temperature.

www.jscj-elec.com

Rev. - 2.2

12 3 4 5

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