Datasheet > CHE1270-QAG/21

CHE1270-QAG/21

更新时间： 2024-09-18 03:18:11

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
8页	439K
描述
12-40GHz Wide Band Detector

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数据手册

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CHE1270-QAG/21 数据手册

CHE1270-QAG

RoHS COMPLIANT

12-40GHz Wide Band Detector

GaAs Monolithic Microwave IC in SMD leadless package

Description

UMS

E1270

YYWWꢀꢀ

The CHE1270-QAG is

integrates a matched detector diode (Vdet)

and a reference diode (Vref).

detector that

It is designed for a wide range of applications

where an accurate transmitted power control

is required, typically commercial

CHE1270

RF IN

communication systems.

Matching

The circuit is manufactured with a Schottky

diode MMIC process, 1µm gate length, via

holes through the substrate and air bridges.

Vdet

Vref

It is available in leadless SMD package.

Transmitted power detection (mV)

10000

Main Features

12 GHz

32GHz

17GHz

37GHz

22GHz

40GHz

27GHz

1000

100

■

Wide frequency range: 12-40GHz

30dB dynamic range

■ ESD protected

■ 16L-QFN3x3 SMD package

Main Characteristics

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2

10 12 14 16

Input power (dBm)

Tamb = +25°C, VDC = +4.5V

Symbol

Parameter

Min

Typ

Max

Unit

Frequency range

Dynamic range

Return Loss

GHz

-10

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref. : DSCHE1270-QAG8205 - 25 Jun 08

1/8

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7 8

中文翻译

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