Ultra Low Noise Amplifier
18 - 26 GHz
CGY2121XUH/C2
Rev. V1
Features
•
Noise Figure:
<1.5 dB on overall bandwidth
(1.2 dB @ 22 GHz)
Flat Gain:
19 dB on overall bandwidth (±0.4 dB)
P1dB:
•
•
>5 dBm
(7 dBm @ 22 GHz)
•
•
•
•
•
•
•
•
•
Single Supply: -1.5 V & +1.5V
Low Consumption: <92 mW
Robust CW Input Power: 19 dBm Max.
Input Output Matched: 50 Ω
Input Return Loss: >12 dB @ 22 GHz
Output Return Loss: >11 dB @ 22 GHz
100% RF Tested, Inspected Known Good Die
Samples & Demonstration Boards Available
RoHS* Compliant
Pad Configuration
Applications
Pad
RFin
Function
RF Input
•
•
•
Radar
Telecommunication
Instrumentation
VS (VD2)
VD (VD1)
RFout
Negative Supply Voltage
Positive Supply Voltage
RF Output
Description
The CGY2121XUH/C2 is a high performance GaAs
Low Noise Amplifier MMIC designed to operate in
the K band.
GND1
Backside
1. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
This device has an exceptionally low noise figure of
1.2 dB with a very flat 19 dB of gain (+/-0.4 dB). The
on chip matching provides 12 dB of input return loss
and 11 dB of output return loss. Thanks to the DC
regulation the gain and noise are very stable with
regards to temperature change. It can be used in
Radar, Telecommunication and Instrumentation
applications.
Ordering Information
The die is manufactured using an advanced 70 nm
gate length high Indium content MHEMT
Technology. The MMIC uses gold bond pads and
backside metallization and is fully protected with
Silicon Nitride passivation to obtain the highest level
of reliability.
Part Number
Package
CGY2121XUH/C2
Die
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology SolutionsInc. (MACOM ) anditsaffiliatesreservetherightto makechangestotheproduct(s)orinformationcontained herein withoutnotice.
Forfurtherinformation andsupport pleasevisit: https://www.macom.com/support
DC-0029638