Datasheet > CGY2170YHV

CGY2170YHV

更新时间： 2024-11-19 14:55:15

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
13页	2680K
描述
6-Bit, X-Band Core Chip

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数据手册

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CGY2170YHV 数据手册

6-Bit, X-Band Core Chip

8 - 12 GHz

CGY2170YHV/C1

Rev. V1

Features

Block Diagram

•

Gain Tx/Rx: 5.8 dB @ 10 GHz

RMS Phase Error: 4.0° @ 9 - 10 GHz

RMS Amplitude Error: 0.5 dB @ 8 - 11 GHz

Output P1dB Tx: 12 dBm

Output P1dB Rx: 12 dBm

Return Loss: < -12 dB @ 10 GHz (all states)

Total Power Consumption: 0.36 W

QFN Size: 7 x 7 x 0.9 mm

Tested, Inspected Known Good Die (KGD)

Samples Available

RoHS* Compliant

Applications

•

AESA Radar

Telecommunication

Instrumentation

Description

The CGY2170YHV/C1 is a high performance GaAs

MMIC T/R 6-bit core chip operating in X-band. It

exhibits 3 RF ports including 3 switches. It includes a

6-bit phase shifter, a 6-bit attenuator, and switches.

It has a phase shifting range of 360° and a gain

setting range of 31.5 dB. It covers the frequency

range from 8 to 12 GHz and provide 5.8 dB of gain

at 10 GHz.

The on-chip control logic with serial input register

minimizes the number of bonding pads and greatly

simplifies the interfacing to this device.

Ordering Information

Part Number

Package

This die is manufactured using 0.18 µm gate length

ED02AH pHEMT technology. The MMIC uses gold

bond pads and backside metallization and is fully

protected with silicon nitride passivation to obtain the

highest level of reliability. This technology has been

evaluated for space applications and is on the

European preferred parts list of the European space

agency.

CGY2170YHV/C1

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology SolutionsInc. (MACOM ) anditsaffiliatesreservetherightto makechangestotheproduct(s)orinformationcontained herein withoutnotice.

Forfurtherinformation andsupport pleasevisit: https://www.macom.com/support

DC-0029661

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