Ultra Low Noise Amplifier
25 - 43 GHz
CGY2122XUH/C2
Rev. V1
Features
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Noise Figure: 1.5 dB
Gain: 32 dB
Input Return Loss: >8 dB
Output Return Loss: >8 dB
Power Supply: 30 mA @ 1.1 V
Die Size:3 x 2 mm
100% RF Tested, Inspected Known Good Die
Demonstration Boards Available
RoHS* Compliant
Applications
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Radar
Telecommunication
Instrumentation
SATCOM
Description
Pad Configuration
The CGY2122XUH/C2 is a high performance GaAs
Low Noise Amplifier MMIC designed to operate in
the K band.
Pad
RFOUT
RFIN
VD1
Function
RF Output
RF Input
This device has an exceptionally low noise figure of
1.2 dB with a very flat 19 dB of gain (+/-0.4 dB). The
on chip matching provides 12 dB of input return loss
and 11 dB of output return loss. Thanks to the DC
regulation the gain and noise are very stable with
regards to temperature change. It can be used in
Radar, Telecommunication and Instrumentation
applications.
First Stage Drain
Second Stage Drain
Third Stage Drain
Forth Stage Drain
First Stage Gate
Second Stage Gate
Third Stage Gate
Forth Stage Gate
Ground
VD2
VD3
VD4
VG1
VG2
VG3
VG4
GND1
GND2
N/C
The die is manufactured using an advanced 70 nm
gate length high Indium content MHEMT
Technology. The MMIC uses gold bond pads and
backside metallization and is fully protected with
Silicon Nitride passivation to obtain the highest level
of reliability.
Ground
No Connection
Backside Pad
GND1
1. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
Ordering Information
Part Number
Package
CGY2122XUH/C2
Die
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0029639