Datasheet > CGY2124UH

CGY2124UH

更新时间： 2024-11-19 14:55:43

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
6页	488K
描述
X-Band Low Noise Amplifier

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数据手册

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CGY2124UH 数据手册

X-Band Low Noise Amplifier

8 - 12 GHz

CGY2124UH/C1

Rev. V1

Features

•

Single Supply Architecture

Noise Figure: 1.1 dB

Gain: 32 dB

Gain Flatness: ±0.8 dB

OIP3: 20 dBm

P1dB: 10 dBm

Return Loss: 12 dB

Power Supply: 55 mA @ 5 V

Chip Size: 2.4 x 1.56 mm

100% RF Tested, Known Good Die

Demonstration Boards Available

Space & MIL-STD Available

RoHS* Compliant

Applications

•

Radar

Telecommunication

Instrumentation

Pad Configuration

Pad

RFOUT

RFIN

Function

RF Output

Description

The CGY2124UH/C1 is a high performance GaAs

single supply low noise amplifier MMIC designed to

operate in the X band.

RF Input

VDD

Single Supply Pad

Ground

This device has an ultra-low noise figure of 1.1 dB

with minimum 32 dB of gain. The on chip matching

provides better than 12 dB of input and output return

loss. It can be used in Radar, Telecommunication

and Instrumentation applications.

GND¹

1. The exposed pad centered on the package bottom must be

connected to RF, DC and thermal ground.

The die is manufactured using a 0.13 μm gate length

pHEMT technology. The MMIC uses gold bonding

pads and backside metallization and is fully

protected with Silicon Nitride passivation to obtain

the highest level of reliability.

Ordering Information

Part Number

Package

This technology has been evaluated for Space

applications and is on the European Preferred Parts

List of the European Space Agency.

CGY2124UH/C1

Die

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology SolutionsInc. (MACOM ) anditsaffiliatesreservetherightto makechangestotheproduct(s)orinformationcontained herein withoutnotice.

Forfurtherinformation andsupport pleasevisit: https://www.macom.com/support

DC-0029640

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