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CFSH2-4LTR PDF预览

CFSH2-4LTR

更新时间: 2024-10-26 20:55:07
品牌 Logo 应用领域
CENTRAL 光电二极管
页数 文件大小 规格书
2页 501K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, 1 X 0.60 MM, 0.40 MM HEIGHT, ULTRA SMALL, LEADLESS, SOD-882L, 2 PIN

CFSH2-4LTR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOD
包装说明:1 X 0.60 MM, 0.40 MM HEIGHT, ULTRA SMALL, LEADLESS, SOD-882L, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.36
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.45 V
JESD-30 代码:R-PDSO-N2JESD-609代码:e0
最大非重复峰值正向电流:1 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.1 W认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CFSH2-4LTR 数据手册

 浏览型号CFSH2-4LTR的Datasheet PDF文件第2页 
CFSH2-4L  
www.centralsemi.com  
SURFACE MOUNT  
SILICON SCHOTTKY DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CFSH2-4L is a  
high quality Schottky Diode designed for applications  
where ultra small size and power dissipation are prime  
requirements. Packaged in a Tiny Leadless Package™  
(TLP™), this component provides performance  
characteristics suitable for the most demanding size  
constrained applications.  
MARKING CODE: N  
SOD-882L CASE  
APPLICATIONS:  
FEATURES:  
DC - DC Converters  
Device is Halogen Free by design  
Voltage Clamping  
Protection Circuits  
Battery powered devices including  
Cell Phones, Digital Cameras, Pagers,  
PDAs, Laptop Computers, etc.  
Current (I =200mA)  
Low Forward Voltage Drop (V =0.53V TYP @ 200mA)  
Low Reverse Current (350nA TYP @ 40V)  
Small TLP™, 1mm x 0.6mm x 0.4mm, ultra low profile,  
Leadless Surface Mount package.  
O
F
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Average Forward Current  
Peak Forward Surge Current, tp=8.3ms  
Power Dissipation  
V
40  
200  
RRM  
I
mA  
A
O
I
1.0  
FSM  
P
100  
mW  
°C  
D
Operating Junction Temperature  
Storage Temperature  
T
-65 to +125  
-65 to +150  
1000  
J
T
°C  
stg  
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =10V  
MIN  
TYP  
MAX  
1.0  
UNITS  
μA  
μA  
V
I
I
0.08  
0.35  
R
R
R
V =40V  
2.0  
R
BV  
I =10μA  
40  
R
R
V
V
V
I =10mA  
0.33  
0.45  
0.52  
0.60  
10  
V
F
F
F
F
I =100mA  
V
F
I =200mA  
0.53  
7.0  
V
F
C
V =4.0V, f=1.0MHz  
pF  
ns  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
5.0  
rr  
F
R
L
R5 (26-April 2011)  

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