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CFSH-4_10 PDF预览

CFSH-4_10

更新时间: 2024-10-26 09:24:03
品牌 Logo 应用领域
CENTRAL 肖特基二极管
页数 文件大小 规格书
2页 352K
描述
SURFACE MOUNT SILICON SCHOTTKY DIODE

CFSH-4_10 数据手册

 浏览型号CFSH-4_10的Datasheet PDF文件第2页 
CFSH-4  
www.centralsemi.com  
SURFACE MOUNT  
SILICON SCHOTTKY DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CFSH-4 is a  
high quality Schottky Diode designed for applications  
where ultra small size and power dissipation are prime  
requirements. Packaged in a Tiny Leadless Package  
,
TLP , this component provides performance  
characteristics suitable for the most demanding size  
constrained applications.  
MARKING CODE: L  
SOD-882L CASE  
FEATURES:  
Device is Halogen Free by design  
APPLICATIONS:  
Current (I =200mA)  
O
DC / DC Converters  
Voltage Clamping  
• Protection Circuits  
Low Forward Voltage Drop (V =0.35V TYP @ 1.0mA)  
F
Low Reverse Current (25nA TYP @ 30V)  
Extremely Fast Switching (5ns Max)  
• Battery powered applications including  
Cell Phones, Digital Cameras, Pagers,  
PDAs, Laptop Computers, etc.  
Small TLP, 1mm x 0.6mm x 0.4mm, SOD-882L,  
ultra low profile, Leadless Surface Mount package.  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Peak Repetitive Reverse Voltage  
V
40  
200  
V
mA  
mA  
mW  
°C  
RRM  
Average Forward Current  
I
O
Peak Forward Surge Current, tp=8.3ms  
Power Dissipation  
I
600  
FSM  
P
100  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +125  
1000  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
V
I
V =30V  
25  
200  
R
R
BV  
I =10μA  
40  
R
R
V
V
V
I =1.0mA  
0.35  
0.55  
0.77  
0.38  
0.65  
1.00  
5.0  
V
F
F
F
F
I =15mA  
V
F
I =40mA  
V
F
C
V =0V, f=1.0MHz  
pF  
ns  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
5.0  
rr  
F
R
rr  
L
R2 (4-January 2010)  

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