Datasheet > CEU02N6G

CEU02N6G

更新时间： 2024-01-18 03:19:39

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	419K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEU02N6G 数据手册

CED02N6G/CEU02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

600V, 2A, R_DS(ON)= 5Ω @V_GS= 10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

Limit

600

±30

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

Drain Current-Continuous @ T_C= 25 C

@ T_C= 100 C

Drain Current-Pulsed ^a

I_D

1.3

I_DM

P_D

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

0.4

11.25

W/ C

Single Pulsed Avalanche Energy ^e

E_AS

I_AS

Single Pulsed Avalanche Current ^e

1.5

Operating and Store Temperature Range

T_J,T_stg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

2.4

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 5. 2011.Feb

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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