Datasheet > CEU12N10L

CEU12N10L

更新时间： 2024-02-02 10:27:23

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	568K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEU12N10L 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CEU12N10L 数据手册

CED12N10L/CEU12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

100V, 11A, R_DS(ON)= 175mΩ @V_GS= 10V.

R_DS(ON)= 185mΩ @V_GS= 5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

Limit

100

±20

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

Drain Current-Continuous @ T_C= 25 C

Drain Current-Continuous @ T_C= 100 C

I_D

I_DM

7.5

Drain Current-Pulsed ^a

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.29

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

3.5

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 1. 2010.June.

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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