Datasheet > CEU2182

CEU2182

更新时间： 2024-02-15 17:37:13

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	141K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEU2182 数据手册

CED2182/CEU2182

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

20V, 42A, R_DS(ON)= 18mΩ @V_GS= 4.5V.

R_DS(ON)= 25mΩ @V_GS= 2.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

±12

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

170

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.33

-55 to 175

W/ C

Operating and Store Temperature Range

TJ,Tstg

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

3.0

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 1. 2005.October

http://www.cetsemi.com

12 3 4

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