Datasheet > CES2305

CES2305

更新时间： 2024-01-20 07:07:51

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	110K
描述
P-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CES2305 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CES2305 数据手册

CES2305

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRELIMINARY

-30V, -4A, R_DS(ON)= 55mΩ @V_GS= -10V.

R_DS(ON)= 70mΩ @V_GS= -4.5V.

R_DS(ON)= 120mΩ @V_GS= -2.5V.

High dense cell design for extremely low R_DS(ON)

Rugged and reliable.

Lead free product is acquired.

SOT-23 package.

SOT-23

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-30

±12

-4

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

-15

Maximum Power Dissipation

P_D

1.25

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

100

C/W

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Rev 1. 2006.April

http://www.cetsemi.com

12 3 4

下载PDF

与CES2305相关器件

型号	品牌	描述	获取价格	数据表
CES2307	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2308	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2309	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2310	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2312	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2313	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格