Datasheet > CES2362

CES2362

更新时间： 2022-10-21 09:37:56

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	424K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CES2362 数据手册

CES2362

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 3A, R_DS(ON)= 80mΩ @V_GS= 10V.

R_DS(ON)= 100mΩ @V_GS= 4.5V.

High dense cell design for extremely low R_DS(ON)

Rugged and reliable.

Lead free product is acquired.

SOT-23 package.

SOT-23

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

±20

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation

P_D

1.25

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

100

C/W

Rev 3. 2010.Dec

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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