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CES2308

更新时间： 2024-01-15 02:10:46

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	162K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CES2308 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CES2308 数据手册

CES2308

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRELIMINARY

20V, 5.4A, R_DS(ON)= 27mΩ @V_GS= 4.5V.

R_DS(ON)= 36mΩ @V_GS= 2.5V.

High dense cell design for extremely low R_DS(ON)

Rugged and reliable.

Lead free product is acquired.

SOT-23 package.

SOT-23

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

±12

5.4

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation

P_D

1.25

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

100

C/W

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Rev 1. 2006.June

http://www.cetsemi.com

12 3 4

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