Datasheet > CES2316

CES2316

更新时间： 2022-10-21 09:36:33

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	110K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CES2316 数据手册

CES2316

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 4.8A, R_DS(ON)= 34mΩ @V_GS= 10V.

R_DS(ON)= 50mΩ @V_GS= 4.5V.

High dense cell design for extremely low R_DS(ON)

Lead free product is acquired.

Rugged and reliable.

SOT-23 package.

SOT-23

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

±20

4.8

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation

P_D

1.25

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

100

C/W

Rev 1. 2005.December

http://www.cetsemi.com

12 3 4

下载PDF

与CES2316相关器件

型号	品牌	描述	获取价格	数据表
CES2321	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2321_10	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2323	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2324	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2331	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CES2336	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格