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CEP02N7 PDF预览

CEP02N7

更新时间: 2024-01-09 03:24:31
品牌 Logo 应用领域
华瑞 - CET 晶体晶体管
页数 文件大小 规格书
4页 135K
描述
N-Channel Enhancement Mode Field Effect Transistor

CEP02N7 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

CEP02N7 数据手册

 浏览型号CEP02N7的Datasheet PDF文件第1页浏览型号CEP02N7的Datasheet PDF文件第3页浏览型号CEP02N7的Datasheet PDF文件第4页 
CEP02N7/CEB02N7  
CEI02N7/CEF02N7  
Electrical Characteristics T = 25 C unless otherwise noted  
c
4
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics b  
BVDSS  
IDSS  
VGS = 0V, ID = 250µA  
VDS = 700V, VGS = 0V  
VGS = 30V, VDS = 0V  
VGS = -30V, VDS = 0V  
700  
V
25  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
Gate Threshold Voltage  
Static Drain-Source  
VGS(th)  
RDS(on)  
gFS  
VGS = VDS, ID = 250µA  
VGS = 10V, ID = 1A  
2
4
V
S
5.5  
0.7  
6.6  
On-Resistance  
Forward Transconductance  
Dynamic Characteristics c  
Input Capacitance  
VDS = 50V, ID = 1A  
Ciss  
Coss  
Crss  
250  
50  
pF  
pF  
pF  
VDS = 25V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics c  
Turn-On Delay Time  
30  
td(on)  
tr  
td(off)  
tf  
19  
26  
34  
15  
14  
2.5  
8.6  
35  
50  
70  
40  
20  
ns  
ns  
VDD = 300V, ID = 2A,  
VGS = 10V, RGEN = 18Ω  
Turn-On Rise Time  
Turn-Off Delay Time  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
Qg  
nC  
nC  
nC  
VDS = 480V, ID = 2A,  
VGS = 10V  
Gate-Source Charge  
Qgs  
Qgd  
Gate-Drain Charge  
Drain-Source Diode Characteristics and Maximun Ratings  
g
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage b  
IS  
1.9  
1.5  
A
V
h
VSD  
VGS = 0V, IS = 2A  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature .  
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .  
c.Guaranteed by design, not subject to production testing.  
d.L =60mH, I =2.0A, V = 50V, R = 25Ω, Starting T = 25 C .  
AS  
DD  
G
J
e.Limited only by maximum temperature allowed .  
f .Pulse width limited by safe operating area .  
g.Full package I  
= 1.4A .  
S(max)  
h.Full package V test condition I = 1.5A , V = 1.6V .  
SD  
S
SD(Max)  
4 - 11  

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