Datasheet > CEM8968

CEM8968

更新时间： 2024-09-17 03:25:15

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	541K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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技术参数
数据手册

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CEM8968 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CEM8968 数据手册

CEM8968

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

30V, 7A, R_DS(ON)= 28mΩ @V_GS= 10V.

R_DS(ON)= 40mΩ @V_GS= 4.5V.

-30V, -6.2A, R_DS(ON)= 33mΩ @V_GS= -10V.

R_DS(ON)= 52mΩ @V_GS= -4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

N-Channel

P-Channel

-30

Units

Drain-Source Voltage

±20

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

±20

-6.2

I_DM

-25

Maximum Power Dissipation

P_D

2.0

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

62.5

C/W

Rev 2. 2007.Jan

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4 5 6 7

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